SKM200GB12V ? by semikron rev. 5 ? 17.06.2011 1 semitrans ? 3 gb SKM200GB12V features ? v-igbt = 6. generation trench v-igbt (fuji) ? cal4 = soft switching 4. generation cal-diode ? isolated copper baseplate using dbc technology (direct copper bonding) ? ul recognized, file no. e63532 ? increased power cycling capability ? with integrated gate resistor ? low switching losses at high di/dt typical applications* ?ac inverter drives ?ups ? electronic welders remarks ? case temperature limited to t c = 125c max, recomm. t op = -40 ... +150c, product rel. results valid for t j = 150 absolute maximum ratings symbol conditions values unit igbt v ces t j =25c 1200 v i c t j = 175 c t c =25c 311 a t c =80c 237 a i cnom 200 a i crm i crm = 3xi cnom 600 a v ges -20 ... 20 v t psc v cc = 720 v v ge 20 v v ces 1200 v t j =125c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 229 a t c =80c 172 a i fnom 200 a i frm i frm = 3xi fnom 600 a i fsm t p = 10 ms, sin 180, t j =25c 990 a t j -40 ... 175 c module i t(rms) t terminal =80c 500 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =200a v ge =15v chiplevel t j =25c 1.75 2.20 v t j =150c 2.20 2.50 v v ce0 t j =25c 0.94 1.04 v t j =150c 0.88 0.98 v r ce v ge =15v t j =25c 4.05 5.8 m ? t j =150c 6.60 7.60 m ? v ge(th) v ge =v ce , i c = 8 ma 5.5 6 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j =150c ma c ies v ce =25v v ge =0v f=1mhz 12.02 nf c oes f=1mhz 1.18 nf c res f=1mhz 1.178 nf q g v ge = - 8 v...+ 15 v 2210 nc r gint 3.8 ? t d(on) v cc = 600 v i c =200a v ge =15v r g on =3 ? r g off =3 ? di/dt on = 7000 a/s di/dt off =2300a/s du/dt off = 6900 v/ s t j =150c 320 ns t r t j =150c 45 ns e on t j =150c 14 mj t d(off) t j =150c 550 ns t f t j =150c 72 ns e off t j =150c 22 mj r th(j-c) per igbt 0.14 k/w
SKM200GB12V 2 rev. 5 ? 17.06.2011 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 200 a v ge =0v chip t j =25c 2.20 2.52 v t j =150c 2.15 2.47 v v f0 t j =25c 1.3 1.5 v t j =150c 0.9 1.1 v r f t j =25c 4.5 5.1 m ? t j =150c 6.3 6.8 m ? i rrm i f = 200 a di/dt off =5300a/s v ge =15v v cc = 600 v t j =150c 230 a q rr t j =150c 30 c e rr t j =150c 13 mj r th(j-c) per diode 0.26 k/w module l ce 15 20 nh r cc'+ee' terminal-chip t c =25c 0.25 m ? t c =125c 0.5 m ? r th(c-s) per module 0.02 0.038 k/w m s to heat sink m6 3 5 nm m t to terminals m6 2.5 5 nm nm w 325 g semitrans ? 3 gb SKM200GB12V features ? v-igbt = 6. generation trench v-igbt (fuji) ? cal4 = soft switching 4. generation cal-diode ? isolated copper baseplate using dbc technology (direct copper bonding) ? ul recognized, file no. e63532 ? increased power cycling capability ? with integrated gate resistor ? low switching losses at high di/dt typical applications* ?ac inverter drives ?ups ? electronic welders remarks ? case temperature limited to t c = 125c max, recomm. t op = -40 ... +150c, product rel. results valid for t j = 150
SKM200GB12V ? by semikron rev. 5 ? 17.06.2011 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SKM200GB12V 4 rev. 5 ? 17.06.2011 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
SKM200GB12V ? by semikron rev. 5 ? 17.06.2011 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semitrans 3 gb
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